Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process - Université Toulouse 1 Capitole
Article Dans Une Revue IEEE Electron Device Letters Année : 2008

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Résumé

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction with silicon or standing on insulating layers can be transformed into the PtGe2 phase. The solubility of this phase in a sulfuric peroxide mixture (SPM) with- out altering PtSi is demonstrated. The suitability and scalability of the proposed integration scheme is shown through the successful integration and characterization of PtSi source/drain contacts in p-type MOSFETs.
Fichier principal
Vignette du fichier
2008-Breil-EDL-Integration_of_PtSi_in_p-Type_MOSFETs-hal.pdf (397.67 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00356971 , version 1 (18-09-2024)

Identifiants

Citer

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, et al.. Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process. IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩
18 Consultations
0 Téléchargements

Altmetric

Partager

More